- صفحه اصلی
- دانلود دیتاشیت
- دیتاشیت FQP8N80C, FQPF8N80C
FQP8N80C, FQPF8N80C دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | FQP8N80C, FQPF8N80C |
|---|---|
| حجم فایل | 1297.812 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 13 |
دانلود دیتاشیت FQP8N80C, FQPF8N80C |
دانلود دیتاشیت |
|---|
سایر مستندات
FQPF8N80C 11 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FQPF8N80CYDTU
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 59W
- Total Gate Charge (Qg@Vgs): 35nC@10V
- Drain Source Voltage (Vdss): 800V
- Input Capacitance (Ciss@Vds): 1.58nF@25V
- Continuous Drain Current (Id): 8A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 13pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.29Ω@10V,4A
- Package: TO-220
- Manufacturer: onsemi
- Series: QFET®
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 59W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3 (Y-Forming)
- Package / Case: TO-220-3 Full Pack, Formed Leads
- Base Part Number: FQPF8
- detail: N-Channel 800V 8A (Tc) 59W (Tc) Through Hole TO-220F-3 (Y-Forming)